BUK78150-55A,135 NXP Semiconductors, BUK78150-55A,135 Datasheet

MOSFET N-CH 55V 5.5A SOT223

BUK78150-55A,135

Manufacturer Part Number
BUK78150-55A,135
Description
MOSFET N-CH 55V 5.5A SOT223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK78150-55A,135

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.5 A
Power Dissipation
6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934056194135
BUK78150-55A /T3
BUK78150-55A /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
4
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT223 (SC-73), simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
M3D087
c
c
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
Product availability:
BUK78150-55A in SOT223 (SC-73).
BUK78150-55A
TrenchMOS™ standard level FET
Rev. 01 — 30 January 2001
TrenchMOS™ technology
Q101 compliant
150 C rated
Standard level compatible.
Automotive and general purpose power switching:
12 V and 24 V loads
Motors, lamps and solenoids.
Simplified outline
1
technology, featuring very low on-state resistance.
SOT223 (SC-73)
Top view
1
2
4
MSB002 - 1
3
Symbol
MBB076
Product specification
g
d
s

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BUK78150-55A,135 Summary of contents

Page 1

... TrenchMOS™ standard level FET Rev. 01 — 30 January 2001 M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK78150-55A in SOT223 (SC-73). 2. Features TrenchMOS™ technology Q101 compliant 150 C rated Standard level compatible. 3. Applications Automotive and general purpose power switching: ...

Page 2

... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 30 January 2001 BUK78150-55A Typ Max Unit 150 C m 128 150 m 278 Min Max Unit 5 +150 C 55 +150 C 5 © Philips Electronics N.V. 2001. All rights reserved. ...

Page 3

... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07738 Product specification 03aa17 I der (%) 125 150 175 4 der Fig 2. Normalized continuous drain current as a function of solder point temperature. D. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03aa25 120 100 100 125 150 ------------------ - 100 100 us ...

Page 4

... Transient thermal impedance th(j-sp) (K/ 0 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07738 Product specification Conditions Figure Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Value Unit 70 K/W 15 K/W 03nc18 (s) © ...

Page 5

... DS GS Figure 150 150 Figure 7 and 150 MHz; Figure 2 5 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Typ Max Unit 4 500 A 2 100 nA 128 150 m 278 m 170 230 © Philips Electronics N.V. 2001. All rights reserved ...

Page 6

... Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nb92 ( ( --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Min Typ Max 0.85 1 03nb90 200 (m ) 180 160 140 120 100 ...

Page 7

... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nb88 C (pF ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03aa35 min typ max ( ...

Page 8

... Product specification 03nc22 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values ( 150 0.0 0.5 1.0 1.5 2 (V) Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03nb87 (nC 03nc23 O C 2.5 © Philips Electronics N.V. 2001. All rights reserved ...

Page 9

... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2001. All rights reserved. ...

Page 10

... Product specification 7.00 3.85 3.60 3.50 0.30 4 4.80 3.90 7. MSA443 1.20 (3x) 1.30 (3x) 5.90 6.15 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET solder lands solder resist occupied area solder paste © Philips Electronics N.V. 2001. All rights reserved ...

Page 11

... Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Philips Semiconductors assumes © ...

Page 12

... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA71) Rev. 01 — 30 January 2001 BUK78150-55A © Philips Electronics N.V. 2001. All rights reserved ...

Page 13

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2001 Document order number: 9397 750 07738 Printed in The Netherlands BUK78150-55A TrenchMOS™ standard level FET ...

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