BUK78150-55A,135 NXP Semiconductors, BUK78150-55A,135 Datasheet
BUK78150-55A,135
Specifications of BUK78150-55A,135
BUK78150-55A /T3
BUK78150-55A /T3
Related parts for BUK78150-55A,135
BUK78150-55A,135 Summary of contents
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... TrenchMOS™ standard level FET Rev. 01 — 30 January 2001 M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK78150-55A in SOT223 (SC-73). 2. Features TrenchMOS™ technology Q101 compliant 150 C rated Standard level compatible. 3. Applications Automotive and general purpose power switching: ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 30 January 2001 BUK78150-55A Typ Max Unit 150 C m 128 150 m 278 Min Max Unit 5 +150 C 55 +150 C 5 © Philips Electronics N.V. 2001. All rights reserved. ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07738 Product specification 03aa17 I der (%) 125 150 175 4 der Fig 2. Normalized continuous drain current as a function of solder point temperature. D. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03aa25 120 100 100 125 150 ------------------ - 100 100 us ...
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... Transient thermal impedance th(j-sp) (K/ 0 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07738 Product specification Conditions Figure Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Value Unit 70 K/W 15 K/W 03nc18 (s) © ...
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... DS GS Figure 150 150 Figure 7 and 150 MHz; Figure 2 5 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Typ Max Unit 4 500 A 2 100 nA 128 150 m 278 m 170 230 © Philips Electronics N.V. 2001. All rights reserved ...
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... Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nb92 ( ( --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Min Typ Max 0.85 1 03nb90 200 (m ) 180 160 140 120 100 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nb88 C (pF ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03aa35 min typ max ( ...
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... Product specification 03nc22 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values ( 150 0.0 0.5 1.0 1.5 2 (V) Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET 03nb87 (nC 03nc23 O C 2.5 © Philips Electronics N.V. 2001. All rights reserved ...
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... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2001. All rights reserved. ...
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... Product specification 7.00 3.85 3.60 3.50 0.30 4 4.80 3.90 7. MSA443 1.20 (3x) 1.30 (3x) 5.90 6.15 Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET solder lands solder resist occupied area solder paste © Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 30 January 2001 BUK78150-55A TrenchMOS™ standard level FET Philips Semiconductors assumes © ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA71) Rev. 01 — 30 January 2001 BUK78150-55A © Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2001 Document order number: 9397 750 07738 Printed in The Netherlands BUK78150-55A TrenchMOS™ standard level FET ...