PMZ390UN,315 NXP Semiconductors, PMZ390UN,315 Datasheet - Page 7

• Manufacturer Part Number: PMZ390UN,315
• Description: MOSFET N-CH 30V 1.78A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ390UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.78A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.78 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060156315; PMZ390UN T/R; PMZ390UN T/R

NXP Semiconductors
PMZ390UN_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
GS(th)
(V)
V
(V)
1.2
0.9
0.6
0.3
GS
0
5
4
3
2
1
0
I
junction temperature
I
charge; typical values
-60
D
D
0
= 1 mA; V
= 1 A; V
I
T
V
D
j
DS
= 1 A
= 25 C
= 15 V
0.2
DS
0
DS
= 15 V
= V
0.4
GS
max
min
typ
60
0.6
120
0.8
T
Q
j
03an99
G
( C)
03aj65
(nC)
180
1
Rev. 01 — 12 July 2007
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
I
D
10
10
10
10
-3
-4
-5
-6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
N-channel TrenchMOS standard level FET
DS
GS(th)
GS
Q
DS
GS1
0.4
= 5 V
I
Q
D
GS
min
Q
GS2
Q
G(tot)
typ
Q
PMZ390UN
GD
0.8
© NXP B.V. 2007. All rights reserved.
V
max
GS
003aaa508
(V)
03am43
1.2
7 of 13