SI2301-TP Micro Commercial Components (MCC), SI2301-TP Datasheet - Page 3

• Manufacturer Part Number: SI2301-TP
• Description: MOSFET P-CH 20V 2.8A SOT-23
• Manufacturer: Micro Commercial Components (MCC)

Specifications of SI2301-TP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 880pF @ 6V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 110 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2.8 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2301-TPMSTR

Revision: A
Micro Commercial Components
M C C
1200
1000
800
600
400
200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
8
6
4
2
0
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
-V
=-250µA
-V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
2
GS
1
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
www.mccsemi.com
0
with Temperature
C iss
C oss
C rss
25
4
2
50
75
6
3
-V
GS
TM
100
-V
=4.5,4,3,V
GS
8
4
125
=2.5V
150
10
5
3 of 5
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
10
1
0
-1
8
6
4
2
0
-100
Figure 6. Body Diode Forward Voltage
0.0
0.2
-V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=-2.8A
-V
T
, Body Diode Forward Voltage (V)
T
=-4.5V
J
0.5
GS
J
-50
=125 C
, Junction Temperature( C)
0.4
, Gate-to-Source Voltage (V)
with Temperature
1.0
0
0.6
SI2301
50
1.5
0.8
100
-55 C
2.0
25 C
1.0
150
2.5
200
1.2
3.0
2011/01/01