SI2301-TP Micro Commercial Components (MCC), SI2301-TP Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single SI2301-TP
Manufacturer Part Number
SI2301-TP
Description
MOSFET P-CH 20V 2.8A SOT-23
Manufacturer
Micro Commercial Components (MCC)
Specifications of SI2301-TP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
14.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
880pF @ 6V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
SOT-23
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
110 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 2.8 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI2301-TPMSTR
Available stocks
Revision: A
Micro Commercial Components
Features
Maximum Ratings @ 25
Internal Block Diagram
M C C
Symbol
R
-20V,-2.8A, R
High dense cell design for extremely low R
Rugged and reliable
High Speed Switching
SOT-23 Package
Marking Code: S1
T
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
V
V
I
P
T
I
DM
STG
θ
DS
D
GS
D
J
JA
G
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
R
DS(ON)
DS(ON)
=120mΩ@V
=150mΩ@V
Parameter
www.mccsemi.com
D
O
S
C Unless Otherwise Specified
a
TM
GS
GS
=-4.5V
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
=-2.5V
b
DS(ON)
-55 to +150
-55 to +150
Rating
1.25
-2.8
±8
-20
-10
100
1 of 5
Unit
℃/W
℃
℃
W
V
V
A
A
G
Field Effect Transistor
DIM
A
B
C
D
E
F
G
H
K
J
Enhancement Mode
F
K
INCHES
.0005
.110
.083
.047
.035
.070
.018
.035
.003
.015
MIN
3
.035
.900
1
A
E
.037
.950
P-Channel
Suggested Solder
D
2
.031
.800
SOT-23
SI2301
.0039
Pad Layout
MAX
.120
.098
.055
.041
.081
.024
.044
.007
.020
DIMENSIONS
.950
.037
H
C
B
MIN
2.80
2.10
1.20
1.78
.013
.085
.89
.45
.89
.37
MM
.079
2.000
J
2011/01/01
1.GATE
2. SOURCE
3. DRAIN
MAX
3.04
2.64
1.40
1.03
2.05
.100
1.12
.180
.60
.51
inches
mm
NOTE
Related parts for SI2301-TP
SI2301-TP Summary of contents
... STG Internal Block Diagram www.mccsemi.com Revision: A omponents TM 20736 Marilla Street Chatsworth !"# $
% !"# =-4.5V GS =-2.5V GS DS(ON) Rating -20 -2.8 a -10 ±8 1.25 b 100 -55 to +150 -55 to +150 SI2301 P-Channel Enhancement Mode Field Effect Transistor SOT- Unit ℃/W ℃ ℃ DIMENSIONS INCHES MM DIM ...
... -5V iss V = -6V oss f = 1.0 MHz C rss d t d(on -6V -4.5V d(off -6V -4. 0V SI2301 Min Typ Max = -250 µ 100 -100 -250 µ A -0. -2.8A 80 120 D = -2.0A 110 150 D = -2. 880 = 0V, GS 270 175 -1A 6Ω GEN 14.5 = -2.8A, D 1.5 2.1 -0. ...
... T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature www.mccsemi.com Revision =4.5,4,3 =2. 100 125 150 SI2301 - =125 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics 2.2 I =-2. =-4.5V GS 1.9 1.6 1.3 1.0 0.7 0.4 ...
... Single Pulse - www.mccsemi.com Revision d(on OUT V OUT Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve SI2301 Limit DS(ON 1ms 10ms 100ms = =150 C J Single Pulse - Drain-Source Voltage (V) DS Figure 8. Maximum Safe Operating Area off t t d(off) ...
... MCC's products are not authorized for use as critical components in life support devices or systems without the express written Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below ...
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