BSH114,215 NXP Semiconductors, BSH114,215 Datasheet - Page 2

• Manufacturer Part Number: BSH114,215
• Description: MOSFET N-CH 100V 850MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH114,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 4.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 138pF @ 25V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056506215; BSH114 T/R; BSH114 T/R

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07708
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain (reverse) diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak (diode forward) source current T
Quick reference data
Limiting values
Conditions
T
T
T
V
Conditions
T
T
T
T
T
T
T
T
T
Rev. 01 — 09 November 2000
j
sp
sp
GS
j
j
sp
sp
amb
amb
sp
sp
amb
sp
sp
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; t
= 25 C;
= 25 C
= 25 C; t
= 10 V; I
= 25 C; V
= 100 C; V
= 25 C
Figure 1
D
p
p
GS
GS
N-channel enhancement mode field effect transistor
= 0.5 A
GS
GS
10 s;
10 s
GS
= 10 V
= 10 V;
= 10 V;
= 10 V
GS
= 10 V
= 20 k
Figure 3
Figure 2
Figure 2
and
and
3
3
© Philips Electronics N.V. 2000. All rights reserved.
Typ
400
Min
55
55
BSH114
500
Max
100
0.85
0.83
150
Max
100
100
0.85
0.5
0.5
0.3
3.4
0.83
0.36
+150
+150
0.85
3.4
20
2 of 13
Unit
V
A
W
m
Unit
V
V
V
A
A
A
A
A
W
W
A
A
C
C
C