PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 3

MOSFET N-CH 20V 1A SOT-323

PMF290XN,115

Manufacturer Part Number
PMF290XN,115
Description
MOSFET N-CH 20V 1A SOT-323
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMF290XN,115

Package / Case
SC-70-3, SOT-323-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.72nC @ 4.5V
Input Capacitance (ciss) @ Vds
34pF @ 20V
Power - Max
560mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1 A
Power Dissipation
560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057729115
PMF290XN T/R
PMF290XN T/R
Philips Semiconductors
9397 750 12767
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
sp
120
der
10
80
40
1
0
= 25 C; I
function of solder point temperature.
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
Limit R DSon = V DS / I D
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 27 February 2004
DC
Fig 2. Normalized continuous drain current as a
N-channel TrenchMOS™ extremely low level FET
I
I der
(%)
120
der
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
100%
t p = 10 s
100 s
1 ms
10 ms
100 ms
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
PMF290XN
150
T sp ( C)
03an13
03aa25
10 2
200
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