BSN20,235 NXP Semiconductors, BSN20,235 Datasheet - Page 4

• Manufacturer Part Number: BSN20,235
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSN20,235

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934012500235; BSN20 /T3; BSN20 /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07213
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on a metal clad substrate.
Z th(j-sp)
(K/W)
pulse duration.
Rev. 03 — 26 June 2000
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
P
t p
Value
150
350
T
=
BSN20
t p
T
t
03aa47
Unit
K/W
K/W
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