IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 6
![MOSFET N-CH 500V 46A SUPER247](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFPS40N50LPBF
Manufacturer Part Number
IRFPS40N50LPBF
Description
MOSFET N-CH 500V 46A SUPER247
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets
1.IRFPS40N50LPBF.pdf
(9 pages)
2.IRFPS40N50LPBF.pdf
(8 pages)
3.IRFPS40N50LPBF.pdf
(9 pages)
Specifications of IRFPS40N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
8110pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
46 A
Power Dissipation
540000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
46A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
Super-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPS40N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91260
IRFPS40N50LPbF
Fig 14a. Unclamped Inductive Test Circuit
1000
Fig 15a. Gate Charge Test Circuit
100
10
1
Fig 12. Maximum Safe Operating
10
T
T
Single Pulse
C
J
12V
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
R G
V
20V
GS
V
V DS
DS
Same Type as D.U.T.
Current Regulator
°
.2µF
t p
, Drain-to-Source Voltage (V)
50KΩ
3mA
I AS
Current Sampling Resistors
Area
D.U.T
BY R
.3µF
0.01 Ω
L
I
G
100
DS(on)
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
10us
100us
1ms
10ms
+
-
V DD
1000
A
2000
1500
1000
500
0
Fig 15b. Basic Gate Charge Waveform
25
Fig 14b. Unclamped Inductive Waveforms
V
Fig 13. Maximum Avalanche Energy
I
AS
GS
Starting T , Junction Temperature( C)
V
G
50
Q
vs. Drain Current
GS
J
t p
75
Q
Charge
Q
GD
G
V
(BR)DSS
100
TOP
BOTTOM
www.vishay.com
125
°
I D
21A
30A
46A
150
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