IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 4
![MOSFET N-CH 500V 46A SUPER247](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFPS40N50LPBF
Manufacturer Part Number
IRFPS40N50LPBF
Description
MOSFET N-CH 500V 46A SUPER247
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets
1.IRFPS40N50LPBF.pdf
(9 pages)
2.IRFPS40N50LPBF.pdf
(8 pages)
3.IRFPS40N50LPBF.pdf
(9 pages)
Specifications of IRFPS40N50LPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
8110pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
46 A
Power Dissipation
540000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
46A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
Super-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFPS40N50LPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91260
IRFPS40N50LPbF
1000000
100000
10000
20
15
10
1000
5
0
100
10
0
Fig 5. Typical Capacitance vs.
I =
Fig 7. Typical Gate Charge vs.
D
1
Drain-to-Source Voltage
47A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
100
G
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
10
= C gd
200
V
V
V
DS
DS
DS
f = 1 MHZ
Coss
Ciss
Crss
= 400V
= 250V
= 100V
100
300
400
1000
1000
40
35
30
25
20
15
10
100
0.1
5
0
10
1
0.2
Fig 8. Typical Source-Drain Diode
0
T = 150 C
Fig 6. Typ. Output Capacitance
J
100
V
V DS, Drain-to-Source Voltage (V)
SD
Stored Energy vs. V
°
0.7
Forward Voltage
,Source-to-Drain Voltage (V)
200
T = 25 C
J
300
1.2
°
400
www.vishay.com
DS
1.7
V
GS
500
= 0 V
600
2.2
4