IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP32N50KPBF
• Description: MOSFET N-CH 500V 32A TO-247AC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFP32N50KPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5280pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Drain Current (max): 32A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP32N50KPBF

Document Number: 91221
Fig 13a. Gate Charge Test Circuit
800
640
480
320
160
0
25
Fig 12a. Maximum Avalanche Energy
12V
Starting T , Junction Temperature ( C)
V
GS
Same Type as D.U.T.
Current Regulator
50
.2µF
Vs. Drain Current
J
50KΩ
3mA
Current Sampling Resistors
.3µF
75
I
G
D.U.T.
100
I
D
TOP
BOTTOM
+
-
V
DS
125
I D
14A
20A
32A
°
150
Fig 12c. Unclamped Inductive Test Circuit
Fig 12d. Unclamped Inductive Waveforms
I
Fig 13b. Basic Gate Charge Waveform
AS
GS
R G
20V
V
V DS
G
t p
Q
t p
GS
I AS
D.U.T
0.01 Ω
L
V
Charge
Q
Q
(BR)DSS
GD
G
15V
www.vishay.com
DRIVER
+
-
V DD
A
6