IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet

MOSFET N-CH 500V 32A TO-247AC

IRFP32N50KPBF

Manufacturer Part Number
IRFP32N50KPBF
Description
MOSFET N-CH 500V 32A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFP32N50KPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
5280pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
460000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
32A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.16Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Drain Current (max)
32A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP32N50KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP32N50KPBF
Manufacturer:
IR
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91221
S11-0448-Rev. C, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 32 A, dI/dt ≤ 197 A/μs, V
TO-247AC
(Ω)
J
= 25 °C, L = 0.87 mH, R
D
a
c
a
a
b
DD
V
GS
≤ V
g
= 10 V
DS
G
= 25 Ω, I
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
190
59
84
This datasheet is subject to change without notice.
AS
D
S
C
= 32 A.
= 25 °C, unless otherwise noted)
Power MOSFET
0.135
V
GS
6-32 or M3 screw
at 10 V
T
C
for 10 s
= 25 °C
T
T
C
C
TO-247AC
IRFP32N50KPbF
SiHFP32N50K-E3
IRFP32N50K
SiHFP32N50K
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Low R
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switching and High Frequency Circuits
Requirement
Ruggedness
and Current
IRFP32N50K, SiHFP32N50K
DS(on)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
500
130
450
460
3.7
1.1
32
20
32
46
13
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP32N50KPBF Summary of contents

Page 1

... Low R DS(on) D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching S • Hard Switching and High Frequency Circuits TO-247AC IRFP32N50KPbF SiHFP32N50K-E3 IRFP32N50K SiHFP32N50K = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP32N50K, SiHFP32N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics 3 2.5 2.0 1.5 1.0 0.5 0 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix 150 ° ° μs PULSE WIDTH Gate-to-Source Voltage ( 100 120 140 160 Junction Temperature www.vishay.com www ...

Page 4

... IRFP32N50K, SiHFP32N50K Vishay Siliconix 100 000 iss = rss = oss = 000 C iss 1000 C oss 100 C rss 10 1 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 400 250 100 120 Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak thJC + T C 0.001 0. Rectangular Pulse Duration (sec) This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...

Page 6

... IRFP32N50K, SiHFP32N50K Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91221. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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