IRFP32N50KPBF Vishay, IRFP32N50KPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP32N50KPBF
• Description: MOSFET N-CH 500V 32A TO-247AC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFP32N50KPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5280pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.16Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Drain Current (max): 32A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP32N50KPBF

IRFP32N50K, SiHFP32N50K
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12a - Unclamped Inductive Test Circuit
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
R
20 V
G
V
DS
Q
GS
t
p
I
AS
D.U.T
Charge
0.01 Ω
Q
L
Q
GD
G
15 V
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
480
160
800
640
320
Driver
0
This datasheet is subject to change without notice.
25
+
- V
A
DD
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
125
I
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
I D
Current regulator
10 A
16 A
7 A
0.2 µF
150
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0448-Rev. C, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 91221
D.U.T.
V
I
D
DS
+
-
V
DS