IRFP460APBF Vishay, IRFP460APBF Datasheet - Page 2

• Manufacturer Part Number: IRFP460APBF
• Description: MOSFET N-CH 500V 20A TO-247AC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFP460APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Gate Charge Qg: 105 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.27 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 270mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.27Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP460APBF

Diode Characteristics
Thermal Resistance
Document Number: 91234
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
E
R
R
R
I
I
V
t
Q
t
R
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
AR
S
SM
rr
on
DSS
GSS
d(on)
d(off)
r
f
fs
AS
AR
SD
θJC
θCS
θJA
(BR)DSS
DS(on)
GS(th)
rr
iss
oss
rss
oss
oss
oss
g
gs
gd
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
11
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.61
3100 –––
4430 –––
–––
–––
–––
480
–––
––– 0.27
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
480
130
140
5.0
18
55
45
39
18
710
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.8
7.5
4.0
20
25
105
26
42
80
µC
ns
µA
nA
nC
ns
pF
V
V
Ω
V
S
Typ.
Typ.
0.24
–––
–––
–––
–––
–––
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
ƒ = 1.0MHz, See Fig. 5
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
V
V
V
V/°C
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
I
DS
GS
DD
GS
DS
GS
GS
GS
G
D
D
= 25°C, I
= 25°C, I
= 20A
= 13Ω,See Fig. 10
= 4.3Ω
= 20A
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
Reference to 25°C, I
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
= 20A, V
= 20A
Conditions
Conditions
= 250µA
= 12A
= 12A
GS
GS
= 0V to 400V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
0.45
960
–––
20
28
40
= 0V
= 0V, T
www.vishay.com
GS
„
„
J
= 0V „
G
= 125°C
D
= 1mA
S
Units
Units
°C/W
+L
mJ
mJ
A
D
D
S
)
2