IRFP460APBF Vishay, IRFP460APBF Datasheet

MOSFET N-CH 500V 20A TO-247AC

IRFP460APBF

Manufacturer Part Number
IRFP460APBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFP460APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Gate Charge Qg
105 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460APBF

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Price
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l
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Document Number: 91234
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I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss specified (
Full Bridge
PFC Boost
C
C
C

= 25°C
= 100°C
= 25°C
through … are on page 8
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
10 lbf•in (1.1N•m)
HEXFET Power MOSFET
-55 to + 150
Rds(on) max
Max.
280
± 30
2.2
3.8
20
13
80
TO-247AC
0.27Ω
G
www.vishay.com
D
S
Units
W/°C
V/ns
20A
°C
W
A
V
I
D
1

Related parts for IRFP460APBF

IRFP460APBF Summary of contents

Page 1

... Document Number: 91234 SMPS MOSFET HEXFET Power MOSFET V DSS 500V @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Rds(on) max I D 0.27Ω 20A TO-247AC Max. Units 280 W 2.2 W/°C ± 3.8 V/ns - 150 °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA D = 12A „ 250µ 0V 125° Conditions = 12A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V … DS Max. Units 960 Max. Units 0.45 ––– °C/W 40 Conditions „ = 20A 20A www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 19A 20A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 19A 20A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° ° = 150 C 10ms 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 100 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91234 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy 620 600 580 560 + 540 0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 8.9A 13A BOTTOM 20A 50 75 100 125 ° J Vs. Drain Current Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Document Number: 91234 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - V =10V www.vishay.com 7 ...

Page 8

... CONFORMS TO JEDEC OUTLINE TO-247-AC. LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 1 - Gate 1 - Gate 0.80 (.031 Drain 1 - GATE 2 - Collector 0.40 (.016 DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - Collector 4 - DRAIN PART NUMBER 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H DSS TAC Fax: (310) 252-7903 11/03 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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