IRFI9640G Vishay, IRFI9640G Datasheet - Page 4

• Manufacturer Part Number: IRFI9640G
• Description: MOSFET P-CH 200V 6.1A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9640G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFI9640G

IRFI9610G, SiHFI9610G
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
400
350
300
250
200
150
100
50
20
16
12
0
8
4
0
1
0
I D = -2.0A
-V DS , Drain-to-Source Voltage (V)
2
V GS = 0V,
C iss
C rss
C oss = C ds + C gd
Q G Total Gate Charge (nC)
4
= C gs + C gd , C ds
= C gd
V DS = -160V
VDS= -100V
VDS= -40V
Ciss
Crss
Coss
6
f = 1 MHZ
10
8
FOR TEST CIRCUIT
SEE FIGURE 13
10
SHORTED
12
14
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10.0
100
1.0
0.1
0.1
10
1
0.0
Fig. 8 - Maximum Safe Operating Area
10
Tc = 25°C
Tj = 150°C
Single Pulse
-V DS , Drain-toSource Voltage (V)
-V SD , Source-toDrain Voltage (V)
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 150°C
2.0
100
S09-0011-Rev. A, 19-Jan-09
T J = 25°C
3.0
Document Number: 91165
10msec
100µsec
1msec
V GS = 0V
4.0
1000
5.0