IRFI9640G Vishay, IRFI9640G Datasheet - Page 3

• Manufacturer Part Number: IRFI9640G
• Description: MOSFET P-CH 200V 6.1A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9640G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFI9640G

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
0.01
0.01
0.1
0.1
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
1
1
0.1
0.1
TOP
BOTTOM -4.5V
TOP
BOTTOM -4.5V
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
VGS
VGS
-15V
-15V
-10V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
-4.5V
-4.5V
10
10
C
C
= 150 °C
= 25 °C
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
10
1
0
4.0
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
I D = -2.0A
V GS = -10V
IRFI9610G, SiHFI9610G
5.0
-V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
6.0
0
20
7.0
40
T J = 25°C
V DS = -50V
20µs PULSE WIDTH
Vishay Siliconix
60
8.0
80 100 120 140 160
9.0
T J = 150°C
www.vishay.com
10.0
11.0
3