IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 6

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

IRFB11N5OA
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
10 V
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I A S
.3 F
D .U .T
0 .0 1
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
600
500
400
300
200
100
Fig 12d. Typical Drain-to-Source Voltage
0
6 6 0
6 4 0
6 2 0
6 0 0
5 8 0
25
Fig 12c. Maximum Avalanche Energy
0 . 0
Starting T , Junction Temperature ( C)
1 . 0
50
Vs. Avalanche Current
I
av
Vs. Drain Current
J
2 . 0
, A valanche C urrent (A )
75
3 . 0
100
4 . 0
TOP
BOTTOM
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5 . 0
125
6 . 0
°
4.9A
7.0A
I D
11A
150
7 . 0
A