IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 2

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

Static @ T
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Diode Characteristics
E
I
E
R
R
R
V
R
V
I
I
I
I
V
t
Q
t
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
IRFB11N5OA
AR
DSS
GSS
S
SM
on
d(on)
d(off)
rr
r
f
2
AS
AR
(BR)DSS
GS(th)
fs
SD
DS(on)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
JC
CS
JA
eff.
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
500
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
6.1
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1423 –––
2000 –––
–––
–––
–––
–––
––– 0.52
–––
––– -100
–––
–––
–––
510
–––
–––
–––
–––
208
3.4
8.1
14
35
32
28
55
97
–––
250
100
770
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.5
5.1
25
52
13
18
11
44
µA
nA
µC
nC
ns
pF
ns
V
V
V
S
A
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
V
V
di/dt = 100A/µs
V
V
V
V
V
showing the
p-n junction diode.
T
T
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
integral reverse
D
D
GS
GS
DS
DS
DS
GS
GS
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 11A
= 11A
= 25°C, I
= 25°C, I
= 9.1
= 22 ,See Fig. 10
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 25V
= 50V, I
= 400V
= 10V, See Fig. 6 and 13
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
= 11A
Conditions
= 11A, V
= 250µA
= 6.6A
= 6.6A
GS
GS
= 0V to 400V
Max.
Max.
0.75
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
275
–––
11
17
62
= 0V
= 0V, T
www.irf.com
GS
J
= 0V
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)