IRF840A Vishay, IRF840A Datasheet - Page 3

• Manufacturer Part Number: IRF840A
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840A

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100
100
0.1
0.1
10
10
1
1
4.0
0.1
TOP
BOTTOM
T = 150 C
J
V
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
5.0
GS
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
J
1
6.0
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
7.0
J
DS
4.5V
10
= 50V
°
8.0
100
9.0
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
0.1
TOP
BOTTOM
I =
D
7.4A
8.0
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150 C
J
4.5V
10
°
V
°
GS
=
10V
3
100