IRF840A Vishay, IRF840A Datasheet

MOSFET N-CH 500V 8A TO-220AB

IRF840A

Manufacturer Part Number

IRF840A

Description

MOSFET N-CH 500V 8A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRF840A.pdf (8 pages)

2.IRF840A.pdf (8 pages)

Specifications of IRF840A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

850 mOhm @ 4.8A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

8A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

1018pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.85 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

8 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF840A

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Company

Part Number

Manufacturer

Quantity

Price

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dv/dt

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@ T

@ T

Drive Requirement

Avalanche Voltage and Current

dv/dt Ruggedness

@T

Full Bridge

Switch Mode Power Supply ( SMPS )

Uninterruptable Power Supply

High speed power switching

Low Gate Charge Qg results in Simple

Improved Gate, Avalanche and dynamic

Fully Characterized Capacitance and

Effective Coss Specified (See AN1001)

Haft Bridge

Two Transistor Forward

C

C

C

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Parameter

SMPS MOSFET

GS

GS

@ 10V

@ 10V

V

500V

DSS

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

-55 to + 150

Rds(on) max

TO-220AB

Max.

125

± 30

8.0

5.1

1.0

5.0

32

0.85Ω

®

Power MOSFET

G

D

S

PD- 91900B

Units

W/°C

8.0A

V/ns

°C

W

A

V

I

D

1

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