IRF9Z34 Vishay, IRF9Z34 Datasheet - Page 5

• Manufacturer Part Number: IRF9Z34
• Description: MOSFET P-CH 60V 18A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9Z34

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z34

Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
16
12
8
4
0
91092_11
25
10
0.1
10
-2
1
50
10
T
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
This datasheet is subject to change without notice.
Single Pulse
(Thermal Response)
150
10
175
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 10a - Switching Time Test Circuit
10 %
90 %
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
t
GS
d(on)
V
IRF9Z34, SiHF9Z34
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
1
j
= P
D.U.T.
P
DM
www.vishay.com/doc?91000
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
1
1
thJC
/t
2
t
+ T
t
2
f
-
+
www.vishay.com
C
10
V
DD
5