IRF9Z34 Vishay, IRF9Z34 Datasheet - Page 2

• Manufacturer Part Number: IRF9Z34
• Description: MOSFET P-CH 60V 18A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9Z34

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z34

IRF9Z34, SiHF9Z34
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
V
V
V
GS
GS
R
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
g
J
= - 10 V
= - 10 V
= 12 Ω, R
= 25 °C, I
= - 48 V, V
V
V
V
V
V
DS
f = 1.0 MHz, see fig. 5
DD
TYP.
GS
0.50
TEST CONDITIONS
DS
DS
-
-
= - 25 V, I
= - 30 V, I
F
= 0 V, I
= - 60 V, V
= V
V
V
= - 18 A, dI/dt = 100 A/μs
GS
V
DS
S
D
GS
GS
GS
= - 18 A, V
= 1.5 Ω, see fig. 10
= ± 20 V
= - 25 V,
, I
= 0 V,
D
= 0 V, T
D
see fig. 6 and 13
= - 250 μA
D
D
= 250 μA
V
GS
= - 11 A
I
I
= - 18 A,
D
D
DS
D
= - 1 8 A,
= - 11 A
= 0 V
= - 1 mA
= - 48 V,
J
GS
G
= 150 °C
G
= 0 V
b
b
MAX.
D
S
b
b
D
S
1.7
62
b
-
b
MIN.
- 2.0
- 60
5.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91092
- 0.060
TYP.
1100
0.28
620
100
120
100
4.5
7.5
18
20
58
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.14
- 6.3
0.52
- 18
- 72
200
9.9
S
34
16
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V