SUM60N10-17-E3 Vishay, SUM60N10-17-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM60N10-17-E3
• Description: MOSFET N-CH 100V 60A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM60N10-17-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM60N10-17-E3; SUM60N10-17-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72070
S-81224-Rev. B, 02-Jun-08
0.01
0.1
80
60
40
20
0
2
1
10
0
-4
http://www.vishay.com/ppg?72070.
Duty Cycle = 0.5
0.1
0.2
Maximum Avalanche and Drain Current
Single Pulse
25
0.02
T
0.05
C
50
vs. Case Temperature
- Ambient Temperature (°C)
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
Square Wave Pulse Duration (s)
175
10
-2
1000
100
0.1
10
1
0.1
* V
GS
by R
Limited
> minimum V
V
DS(on)
DS
1
10
Single Pulse
T
- Drain-to-Source Voltage (V)
Safe Operating Area
*
-1
C
= 25 °C
GS
SUM60N10-17
at which r
10
Vishay Siliconix
DS(on)
100
www.vishay.com
is specified
1 ms
10 ms
100 ms
DC
10 µs
100 µs
1
1000
5