SUM60N10-17-E3 Vishay, SUM60N10-17-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM60N10-17-E3
• Description: MOSFET N-CH 100V 60A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM60N10-17-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM60N10-17-E3; SUM60N10-17-E3TR

SUM60N10-17
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.5
2.0
1.5
1.0
0.5
0.0
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 30 A
= 10 V
0
T
J
- Junction Temperature (°C)
25
50
75
100
130
125
120
115
110
105
100
95
125
- 50 - 25
On-Resistance vs. Junction Temperature
150
I
D
= 10 A
175
0
T
J
- Junction Temperature (°C)
25
50
75
100
100
10
1
0
125
Source-Drain Diode Forward Voltage
150
T
V
175
0.3
J
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.6
S-81224-Rev. B, 02-Jun-08
Document Number: 72070
T
0.9
J
= 25 °C
1.2