SUM110P08-11L-E3 Vishay, SUM110P08-11L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110P08-11L-E3
• Description: MOSFET P-CH 80V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P08-11L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10850pF @ 40V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0112 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23.5 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -80V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0112Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P08-11L-E3; SUM110P08-11L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
0.020
0.016
0.012
0.008
0.004
0.000
10.0
8.0
6.0
4.0
2.0
0.0
200
180
160
140
120
100
80
60
40
20
0.0
0
0
1
V
GS
On-Resistance vs. Drain Current
40.0
= 10 V thru 6V
20
Output Characteristics
V
DS
80.0
Gate Charge
40
= 40 V
Q
V
g
DS
I
D
- (nC)
- (A)
2
V
- (V)
V
V
DS
120.0
GS
GS
60
= 64 V
= 6 V
= 10 V
160.0
80
4 V
New Product
200.0
100
3
15000
12000
9000
6000
3000
2.5
2.1
1.7
1.3
0.9
0.5
40
30
20
10
0
0
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
C
I
V
oss
D
GS
= 20 A
= 10 V
1
C
0
20
rss
Transfer Characteristics
25
T
C
Capacitance
= 125 °C
V
2
V
SUM110P08-11
DS
T
GS
50
J
- (°C)
- (V)
40
- (V)
25 °C
Vishay Siliconix
75
C
iss
3
100
www.vishay.com
60
- 55 °C
125
4
150
80
175
5
3