SUM110P08-11L Vishay Semiconductors, SUM110P08-11L Datasheet

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SUM110P08-11L

Manufacturer Part Number
SUM110P08-11L
Description
Manufacturer
Vishay Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110P08-11L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUM110P08-11L-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is °C/W.
Document Number: 73471
S-72194-Rev. B, 22-Oct-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
- 80
(V)
Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free)
0.0145 at V
0.0112 at V
G
Top View
TO-263
r
D
DS(on)
S
GS
GS
(Ω)
J
= - 4.5 V
= - 10 V
= 175 °C)
b, d
Drain Connected to Tab
P-Channel 80-V (D-S) MOSFET
I
D
- 110
- 109
(A)
b
A
Q
= 25 °C, unless otherwise noted
Steady State
T
T
T
T
85 nC
g
T
T
L = 0.1 mH
T
T
T
T
C
A
C
A
C
C
C
A
A
A
(Typ)
t ≤ 10 s
New Product
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
DS
GS
D
AS
S
D
stg
®
Power MOSFET
Typical
0.33
8
- 55 to 175
G
- 23.5
13.6
13.6
- 110
4.5
Limit
- 120
- 110
- 9
± 20
- 80
- 71
- 75
281
375
125
P-Channel MOSFET
SUM110P08-11L
b, c
b, c
b, c
b, c
b, c
a
Maximum
S
D
0.4
11
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
RoHS
V
A
COMPLIANT
1

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SUM110P08-11L Summary of contents

Page 1

... 0.0145 4 TO-263 Drain Connected to Tab Top View Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... SUM110P08-11L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 73471 S-72194-Rev. B, 22-Oct-07 New Product 15000 12000 9000 6000 3000 80 100 120 160 200 240 SUM110P08-11L Vishay Siliconix ° 125 ° (V) GS Transfer Characteristics C iss C oss C ...

Page 4

... SUM110P08-11L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.3 0 (V) SD Source-Drain Diode Forward Voltage 1.0 0.8 0.6 0 1mA D 0.2 0.0 - 0 (°C) J Threshold Voltage 400 350 300 250 200 150 100 100 T C Power Derating, Junction-to-Case www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73471. Document Number: 73471 S-72194-Rev. B, 22-Oct-07 New Product 1000.0 100.0 10.0 1.0 0.1 0.00001 125 150 175 0.01 0.001 Normalized Thermal Transient Impedance, Junction-to-Case SUM110P08-11L Vishay Siliconix 0.0001 0.001 0.01 0.1 1 (s) Avalanche Current vs. Time 1 0.1 www.vishay.com 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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