SUM110P08-11L-E3 Vishay, SUM110P08-11L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110P08-11L-E3
• Description: MOSFET P-CH 80V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P08-11L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10850pF @ 40V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0112 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23.5 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -80V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0112Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P08-11L-E3; SUM110P08-11L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73471
S-72194-Rev. B, 22-Oct-07
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
10
8
6
4
2
0
80
40
0
0
0
0
V
GS
40
On-Resistance vs. Drain Current
20
= 10 V thru 6 V
V
Output Characteristics
DS
80
40
= 40 V
Gate Charge
V
Q
V
DS
g
GS
I
120
D
- (nC)
1
60
- (V)
- (A)
= 4.5 V
V
V
DS
GS
160
= 64 V
80
= 10 V
200
100
4 V
5 V
New Product
240
120
2
15000
12000
9000
6000
3000
2.3
2.0
1.7
1.4
1.1
0.8
0.5
40
30
20
10
0
0
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
C
oss
V
I
D
GS
= 20 A
C
T
= 10 V
0
C
rss
20
Transfer Characteristics
1
= 125 °C
25
SUM110P08-11L
Capacitance
V
T
DS
V
50
J
GS
- (°C)
- (V)
40
C
Vishay Siliconix
2
- (V)
iss
75
25 °C
100
www.vishay.com
60
3
125
- 55 °C
150
175
80
4
3