IRFU9120 Vishay, IRFU9120 Datasheet - Page 4
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IRFU9120
Manufacturer Part Number
IRFU9120
Description
MOSFET P-CH 100V 5.6A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFU9120.pdf
(8 pages)
Specifications of IRFU9120
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9120
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU9120NPBF
Manufacturer:
IR
Quantity:
5 000
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91280
4
S09-0060-Rev. A, 02-Feb-09