IRFU9120 Vishay, IRFU9120 Datasheet - Page 2
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IRFU9120
Manufacturer Part Number
IRFU9120
Description
MOSFET P-CH 100V 5.6A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFU9120.pdf
(8 pages)
Specifications of IRFU9120
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9120
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU9120NPBF
Manufacturer:
IR
Quantity:
5 000
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
R
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
G
Reference to 25 °C, I
= - 10 V
= - 10 V
= 25 °C, I
= 18 Ω, R
= - 80 V, V
MIN.
V
V
V
V
V
-
-
-
DD
f = 1.0 MHz, see fig. 5
DS
DS
DS
GS
TEST CONDITIONS
= - 50 V, I
= - 100 V, V
F
= V
= - 50 V, I
= 0 V, I
V
V
= - 6.8 A, dI/dt = 100 A/µs
V
GS
DS
S
I
GS
D
D
GS
= - 5.6 A, V
GS
= 7.1 Ω, see fig. 10
= - 6.8 A, V
, I
= ± 20 V
= - 25 V,
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 µA
D
= - 250 µA
D
I
D
= - 6.8 A,
= - 3.4 A
GS
= - 3.4 A
D
TYP.
= 0 V
= - 1 mA
J
GS
-
-
-
DS
G
= 125 °C
G
= 0 V
= - 80 V,
b
D
S
b
b
b
D
S
b
- 100
MIN.
- 2.0
1.5
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S09-0060-Rev. A, 02-Feb-09
Document Number: 91280
- 0.098
TYP.
0.33
390
170
100
9.6
4.5
7.5
45
29
21
25
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
- 100
- 500
- 4.0
0.60
- 5.6
- 6.3
0.66
S
- 22
200
3.0
9.0
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V