IRF9610 Vishay, IRF9610 Datasheet - Page 6

• Manufacturer Part Number: IRF9610
• Description: MOSFET P-CH 200V 1.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9610

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.8A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9610; IRF9611

IRF9610, SiHF9610
Vishay Siliconix
www.vishay.com
6
10 %
90 %
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
DS
t
r
D.U.T.
R
D
t
d(off)
t
f
-
+
V
DD
Fig. 18a - Basic Gate Charge Waveform
15 V
12 V
V
V
Fig. 18b - Gate Charge Test Circuit
G
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
- 3 mA
Current sampling resistors
50 kΩ
Charge
0.3 µF
Q
Q
GD
G
I
G
S09-0046-Rev. A, 19-Jan-09
Document Number: 91080
D.U.T.
I
D
+
-
V
DS