IRF9610 Vishay, IRF9610 Datasheet - Page 3

• Manufacturer Part Number: IRF9610
• Description: MOSFET P-CH 200V 1.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9610

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.8A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9610; IRF9611

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
91080_01
91080_02
- 2.40
- 1.92
- 1.44
- 0.96
- 0.48
- 2.40
- 1.92
- 1.44
- 0.96
- 0.48
0.00
0.00
0
0
91080_05
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
80 µs Pulse Test
V
0.05
0.02
0.01
V
2.0
1.0
0.5
0.2
0.1
- 10
DS
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
GS ,
- 2
, Drain-to-Source Voltage (V)
10
V
GS
Gate-to-Source Voltage (V)
-5
T
T
D = 0.5
0.05
0.02
0.01
0.2
0.1
J
J
= - 10, - 9, - 8, - 7 V
T
= 125
= - 55
J
- 20
2
= 25
- 4
°
°
°
C
C
C
80 µs Pulse Test
V
5
DS
- 30
- 6
> I
10
D(on)
-4
Single Pulse (Transient
Thermal Impedence)
x R
2
- 40
- 8
DS(on) max.
- 6 V
- 4 V
- 5 V
5
- 50
- 10
10
t
-3
1
, Square Wave Pulse Duration (s)
2
5
10
-2
91080_03
91080_04
2
- 2.40
- 1.92
- 1.44
- 0.96
- 0.48
0.00
10
0.1
10
5
1
2
5
2
5
2
5
2
0
1
Fig. 3 - Typical Saturation Characteristics
Negative V
Fig. 4 - Maximum Safe Operating Area
0.1
V
2
Notes:
1. Duty Factor, D = t
2. Per Unit Base = R
3. T
GS
V
DS ,
80 µs Pulse Test
- 2
2
= - 10, - 9, - 8 V
JM
Operation in this area limited
5
Drain-to-Source Voltage (V)
- T
IRF9610, SiHF9610
DS
C
10
5
, Drain-to-Source Voltage (V)
= P
T
T
Single Pulse
- 4
C
J
by R
DM
= 150 °C
1.0
= 25 °C
2
Z
P
thJC
DS(on)
DM
1
thJC
/t
2
(t)
2
5
Vishay Siliconix
- 6
= 6.4 °C/W
10
t
1
2
5
t
2
2
- 8
100
1
10
10
www.vishay.com
ms
ms
µs
- 7 V
- 6 V
- 4 V
5
- 5 V
- 10
10
3
3