IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 4
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IRFU420APBF
Manufacturer Part Number
IRFU420APBF
Description
MOSFET N-CH 500V 3.3A I-PAK
Manufacturer
Vishay
Specifications of IRFU420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU420APBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 786
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
www.vishay.com
4
10000
1000
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
1
20
15
10
1
5
0
0
I =
D
V DS , Drain-to-Source Voltage (V)
2.5A
Q , Total Gate Charge (nC)
G
4
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
8
V
V
V
FOR TEST CIRCUIT
f = 1 MHZ
DS
DS
DS
SEE FIGURE
100
= 400V
= 250V
= 100V
12
SHORTED
13
1000
16
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
0.4
10
T
T
Single Pulse
C
J
Fig. 8 - Maximum Safe Operating Area
= 25 C
= 150 C
T = 150 C
OPERATION IN THIS AREA LIMITED
J
V
V
SD
DS
°
°
0.6
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
100
BY R
T = 25 C
0.8
J
DS(on)
S10-1135-Rev. B, 10-May-10
10us
100us
1ms
10ms
Document Number: 91274
°
1000
1.0
V
GS
= 0 V
10000
1.2