IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 2

• Manufacturer Part Number: IRFU420APBF
• Description: MOSFET N-CH 500V 3.3A I-PAK
• Manufacturer: Vishay

Specifications of IRFU420APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU420APBF

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
C
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
thCS
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
V
GS
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 0 V
= 21 Ω, R
= 400 V, V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
0.50
DS
DS
GS
oss
DS
-
-
= 250 V, I
F
= 500 V, V
= V
= 0 V, I
V
= 50 V, I
while V
= 2.5 A, dI/dt = 100 A/μs
V
V
GS
DS
V
D
S
V
GS
GS
I
GS
DS
D
DS
= 97 Ω, see fig. 10
= 2.5 A, V
= ± 30 V
V
= 25 V,
, I
= 2.5 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 400 V, f = 1.0 MHz
DS
= 1.0 V, f = 1.0 MHz
D
D
DS
D
= 250 μA
D
= 250 μA
= 0 V to 400 V
I
GS
D
= 1.5 A
is rising from 0 %to 80 % V
= 2.5 A,
= 1.5 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
= 0 V
= 400 V,
b
MAX.
b
b
b
D
S
1.5
c
62
-
b
MIN.
500
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1135-Rev. B, 10-May-10
DS
Document Number: 91274
.
TYP.
0.60
340
490
330
760
2.7
8.1
53
15
28
12
16
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1140
250
500
4.5
3.0
4.3
8.5
3.3
1.6
S
25
17
10
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
pF
ns
ns
Ω
S
A
V
V
V