IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
IRFU420APBF
Manufacturer Part Number
IRFU420APBF
Description
MOSFET N-CH 500V 3.3A I-PAK
Manufacturer
Vishay
Specifications of IRFU420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU420APBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 786
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
C
C
R
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
SM
t
I
t
t
on
thCS
DS
oss
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
V
GS
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 10 V
= 10 V
= 0 V
= 21 Ω, R
= 400 V, V
= 25 °C, I
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
0.50
DS
DS
GS
oss
DS
-
-
= 250 V, I
F
= 500 V, V
= V
= 0 V, I
V
= 50 V, I
while V
= 2.5 A, dI/dt = 100 A/μs
V
V
GS
DS
V
D
S
V
GS
GS
I
GS
DS
D
DS
= 97 Ω, see fig. 10
= 2.5 A, V
= ± 30 V
V
= 25 V,
, I
= 2.5 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
= 400 V, f = 1.0 MHz
DS
= 1.0 V, f = 1.0 MHz
D
D
DS
D
= 250 μA
D
= 250 μA
= 0 V to 400 V
I
GS
D
= 1.5 A
is rising from 0 %to 80 % V
= 2.5 A,
= 1.5 A
D
= 0 V
GS
J
= 1 mA
DS
= 125 °C
G
= 0 V
= 400 V,
b
MAX.
b
b
b
D
S
1.5
c
62
-
b
MIN.
500
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1135-Rev. B, 10-May-10
DS
Document Number: 91274
.
TYP.
0.60
340
490
330
760
2.7
8.1
53
15
28
12
16
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1140
250
500
4.5
3.0
4.3
8.5
3.3
1.6
S
25
17
10
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
μC
nA
μA
pF
pF
ns
ns
Ω
S
A
V
V
V