IRL640STRRPBF Vishay, IRL640STRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRL640STRRPBF
• Description: MOSFET N-CH 200V 17A D2PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRL640STRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 5V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: Q4322190B

Document Number: 91306
S10-2554-Rev. B, 08-Nov-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
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5 V
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t
r
D.U.T.
Vishay Siliconix
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t
d(off)
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www.vishay.com
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