IRL640S Vishay, IRL640S Datasheet
IRL640S
Specifications of IRL640S
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IRL640S Summary of contents
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... SiHL640S SiHL640STL = 25 °C, unless otherwise noted ° 5 100 ° ° °C A for (see fig. 12 150 ° IRL640S, SiHL640S Vishay Siliconix Specified and device design, low on-resistance power capability and the lowest SMD-220 a SiHL640STRR-GE3 a IRL640STRRPbF a a SiHL640STR- IRL640STRR a a SiHL640STR ...
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... IRL640S, SiHL640S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91306 S10-2554-Rev. B, 08-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRL640S, SiHL640S Vishay Siliconix www.vishay.com 3 ...
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... IRL640S, SiHL640S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91306 S10-2554-Rev. B, 08-Nov-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91306 S10-2554-Rev. B, 08-Nov-10 IRL640S, SiHL640S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRL640S, SiHL640S Vishay Siliconix Vary t to obtain p required D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ ...
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... D.U.T. - device under test Driver gate drive Period P.W. D.U.T. l waveform SD Body diode forward current dI/dt D.U.T. V waveform DS Diode recovery dV/dt Body diode forward drop Inductor current Ripple ≤ Note for logic level devices GS Fig For N-Channel IRL640S, SiHL640S Vishay Siliconix - + + P. Period www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...