IRFR9310TRL Vishay, IRFR9310TRL Datasheet - Page 7
![MOSFET P-CH 400V 1.8A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9310TRL
Manufacturer Part Number
IRFR9310TRL
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR9310.pdf
(9 pages)
Specifications of IRFR9310TRL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
7 Ohms
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 91284
S-82992-Rev. B, 12-Jan-09
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
R
V
- 20 V
G
G
V
DS
Q
t
p
GS
I
AS
D.U.T.
0.01 Ω
L
Charge
Q
Q
GD
G
Driver
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
50
0
25
15 V
+
-
Starting T , Junction Temperature ( C)
V
A
DD
50
J
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
125
I
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
-0.49A
GS
Same type as D.U.T.
-0.7A
-1.1A
°
I D
Current regulator
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
Vishay Siliconix
D.U.T.
V
I
D
DS
+
-
V
www.vishay.com
DS
7