IRFR9214TR Vishay, IRFR9214TR Datasheet
IRFR9214TR
Specifications of IRFR9214TR
Available stocks
Related parts for IRFR9214TR
IRFR9214TR Summary of contents
Page 1
... ° 100 ° °C C for 2.7 A (see fig. 12). AS ≤ 150 ° Vishay Siliconix processing techniques to achieve DPAK (TO-252) IPAK (TO-251) a IRFR9214TRPbF IRFU9214PbF a SiHFR9214T-E3 SiHFU9214-E3 a IRFR9214TR IRFU9214 a SiHFR9214T SiHFU9214 SYMBOL LIMIT V - 250 DS V ± 2 1 0.40 E 100 2 5 dV/ ...
Page 2
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... J 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics, T Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 -4.5V ° 10 100 = 25 °C C -4.5V ° 10 100 = 150 °C C Vishay Siliconix ° J ° 150 -50V DS 20μs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics 2 ...
Page 4
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix 400 1MHz iss rss oss ds gd 300 200 100 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1 =-200V DS V =-125V =-50V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91282 S-82992-Rev. B, 12-Jan-09 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
Page 6
... IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 200 TOP 160 BOTTOM 120 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
Page 7
... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91282. ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...