IRFU9214 Vishay, IRFU9214 Datasheet - Page 4

• Manufacturer Part Number: IRFU9214
• Description: MOSFET P-CH 250V 2.7A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9214

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 220pf @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU9214

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
400
300
200
100
20
16
12
8
4
0
0
0
1
I =
D
-1.7 A
-V
Q , Total Gate Charge (nC)
DS
3
G
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
6
0V,
C
C
C
V
V
V
gs
gd
ds
DS
DS
DS
+ C
+ C
=-200V
=-125V
=-50V
10
f = 1MHz
gd ,
gd
FOR TEST CIRCUIT
SEE FIGURE
9
C oss
C rss
C iss
C
ds
SHORTED
12
13
15
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
0.1
0.1
10
10
1
1
1.0
10
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
= 25 C
= 150 C
-V
OPERATION IN THIS AREA LIMITED
V
DS
SD
°
°
2.0
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
T = 150 C
J
BY R
T = 25 C
100
J
3.0
DS(on)
°
S-82992-Rev. B, 12-Jan-09
Document Number: 91282
°
100us
1ms
10ms
4.0
V
GS
= 0 V
1000
5.0