IRFU9214 Vishay, IRFU9214 Datasheet - Page 3
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IRFU9214
Manufacturer Part Number
IRFU9214
Description
MOSFET P-CH 250V 2.7A I-PAK
Manufacturer
Vishay
Specifications of IRFU9214
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
220pf @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9214
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU9214PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91282
S-82992-Rev. B, 12-Jan-09
0.1
0.1
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
-V
-V
DS
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20μs PULSE WIDTH
T = 150 C
20μs PULSE WIDTH
T = 25 C
J
J
10
10
-4.5V
-4.5V
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
°
°
C
C
= 150 °C
= 25 °C
100
100
0.1
Fig. 4 - Normalized On-Resistance vs. Temperature
10
2.5
2.0
1.5
1.0
0.5
0.0
1
4
-60 -40 -20
I =
Fig. 3 - Typical Transfer Characteristics
D
T = 25 C
-V
J
-2.7A
5
GS
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
°
0
6
20 40
7
60 80 100 120 140 160
Vishay Siliconix
V
20μs PULSE WIDTH
T = 150 C
DS
J
8
= -50V
°
V
°
www.vishay.com
GS
9
=
-10V
10
3