IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 6

• Manufacturer Part Number: IRFD9010PBF
• Description: MOSFET P-CH 50V 1.1A 4-DIP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFD9010PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9010PBF

IRFD9010, SiHFD9010
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91405.
www.vishay.com
6
Re-applied
voltage
Reverse
recovery
current
+
-
R
Compliment N-Channel of D.U.T. for driver
g
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
Fig. 14 - For P-Channel
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= - 10 V*
+
-
V
DD
S10-0998-Rev. A, 26-Apr-10
Document Number: 91405