IRFD9010PBF Vishay, IRFD9010PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD9010PBF
• Description: MOSFET P-CH 50V 1.1A 4-DIP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFD9010PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 580mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9010PBF

IRFD9010, SiHFD9010
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
ΔV
R
V
I
t
t
R
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
D(on)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
thJA
t
t
on
DS
oss
SD
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
GS
GS
J
V
GS
T
= 25 °C, I
DS
J
Reference to 25 °C, I
= - 10 V
= - 10 V
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 10 V
= 25 °C, I
= - 40 V, V
V
V
V
V
V
R
TYP.
DS
f = 1.0 MHz, see fig. 5
DD
DS
GS
TEST CONDITIONS
DS
g
-
= 24 Ω, R
= - 20 V, I
= - 25 V, I
= V
F
= 0 V, I
= - 50 V, V
V
V
= - 4.7 A, dI/dt = 100 A/μs
see fig. 10
V
GS
DS
S
GS
V
GS
I
= - 0.7 A, V
GS
DS
D
, I
= - 25 V,
= ± 20 V
= - 4.7 A, V
= 0 V,
see fig. 6 and 13
D
D
> I
= 0 V, T
= - 250 μA
= - 250 μA
I
D
D
D
D
D(on)
GS
= 5.6 Ω,
= - 2.4 A
= - 4.7 A
= - 0.58 A
b
D
= 0 V
x R
= - 1 mA
J
GS
G
= 125 °C
G
DS
DS(on)
= 0 V
= 0.8 V
b
MAX.
D
S
max.
b
120
b
D
S
b
0.090
MIN.
- 2.0
- 1.1
- 50
1.7
33
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-0998-Rev. A, 26-Apr-10
Document Number: 91405
- 0.091
TYP.
0.35
0.22
240
160
2.5
7.2
2.5
2.7
6.1
4.0
6.0
30
47
13
39
75
-
-
-
-
-
-
-
-
-
UNIT
°C/W
- 1000
MAX.
± 500
- 250
- 4.0
0.50
- 1.1
- 8.8
- 5.5
0.52
160
3.8
4.1
9.2
S
11
71
20
59
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
A
Ω
S
A
V
V
V