IRF710 Vishay, IRF710 Datasheet - Page 6

• Manufacturer Part Number: IRF710
• Description: MOSFET N-CH 400V 2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF710

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.9 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710

IRF710, SiHF710
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
For technical questions, contact: [e-mail]
91041_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
150
300
250
200
100
50
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
0.89 A
1.3 A
2.0 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0070-Rev. A, 02-Feb-09
Document Number: 91041
D.U.T.
I
D
+
-
V
DS