IRF710 Vishay, IRF710 Datasheet - Page 5

• Manufacturer Part Number: IRF710
• Description: MOSFET N-CH 400V 2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF710

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.9 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710

Document Number: 91041
S09-0070-Rev. A, 02-Feb-09
91041_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
2.0
1.6
1.2
0.8
0.4
0.0
91041_11
to obtain
AS
25
R
10
0.1
10 V
10
G
-2
1
10
V
50
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
DS
T
C
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
10
For technical questions, contact: [e-mail]
0.01 Ω
L
100
-4
Single Pulse
(Thermal Response)
125
10
t
-3
1
+
-
150
, Rectangular Pulse Duration (s)
V
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
0.1
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
t
IRF710, SiHF710
j
p
= P
P
DM
DM
D.U.T.
x Z
Vishay Siliconix
R
t
1
1
D
thJC
t
/t
d(off)
V
2
DS
t
+ T
2
C
t
10
f
V
+
-
www.vishay.com
DD
V
DD
5