IRF9620SPBF Vishay, IRF9620SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9620SPBF
• Description: MOSFET P-CH 200V 3.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF9620SPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9620SPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91083
S10-1728-Rev. B, 02-Aug-10
91083_02
91083_01
- 5
- 4
- 3
- 2
- 1
- 5
- 4
- 3
- 2
- 1
0
0
91083_05
0
0
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
0.05
0.02
0.01
2.0
1.0
0.5
0.2
0.1
V
V
- 4 V
- 10
DS
GS
- 5 V
- 6 V
- 2
10
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
V
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
T
GS
T
J
T
J
= - 55
= - 10, - 9, - 8, - 7 V
J
= 125
2
= 25
- 20
- 4
°
°
°
C
C
5
C
80 µs Pulse Test
V
DS
- 30
- 6
10
> I
-4
D(on)
80 µs Pulse Test
Single Pulse (Transient
Thermal Impedence)
2
x R
- 40
- 8
DS(on) max.
5
10
- 50
- 10
t
-3
1
, Square Wave Pulse Duration (s)
2
5
10
-2
91083_03
91083_04
2
10
0.1
5
- 5
- 4
- 3
- 2
- 1
10
0
1
2
5
2
5
2
5
2
0
1
Fig. 3 - Typical Saturation Characteristics
0.1
80 µs Pulse Test
Fig. 4 - Maximum Safe Operating Area
Negative V
Notes:
1. Duty Factor, D = t
2. Per Unit Base = R
3. T
2
V
JM
IRF9620S, SiHF9620S
2
DS
- 1
- T
Operation in this area limited
, Drain-to-Source Voltage (V)
5
C
DS
= P
5
10
, Drain-to-Source Voltage (V)
DM
T
T
Single Pulse
- 2
1.0
C
J
by R
Z
= 150 °C
= 25 °C
2
thJC
P
V
1
thJC
DM
/t
GS
DS(on)
2
(t)
2
= 3.12 °C/W
= - 10, - 9, - 8, - 7 V
Vishay Siliconix
5
- 3
t
1
10
5
2
t
2
- 4
2
10
100
1
10
www.vishay.com
ms
ms
µs
- 5 V
- 4 V
- 6 V
5
10
- 5
3
3