IRFBF20SPBF Vishay, IRFBF20SPBF Datasheet

MOSFET N-CH 900V 1.7A D2PAK

IRFBF20SPBF

Manufacturer Part Number
IRFBF20SPBF
Description
MOSFET N-CH 900V 1.7A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFBF20SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
8 Ohm @ 10 V
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBF20SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBF20SPBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 958
Part Number:
IRFBF20SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFBF20SPBF
Quantity:
500
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRFBF20, SiHFBF20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91121
S10-2433-Rev. A, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
I
2
DS
DS(on)
g
gs
gd
PAK (TO-262)
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 1.7 A, dI/dt  70 A/μs, V
= 50 V; starting T
()
D
G
a,e
e
e
2
PAK (TO-263)
J
D
= 25 °C, L = 117 mH, R
S
c, e
a
a
DD
b, e
V
 V
GS
DS
= 10 V
D
SiHFBF20S-GE3
IRFBF20SPbF
SiHFBF20S-E3
IRFBF20S
SiHFBF20S-E3
, T
2
PAK (TO-263)
G
J
Single
 150 °C.
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
900
4.7
N-Channel MOSFET
38
21
g
= 25 , I
C
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
V
GS
8.0
6-32 or M3 screw
AS
at 10 V
= 1.7 A (see fig. 12).
T
T
C
A
for 10 s
D
SiHFBF20STRL-GE3
IRFBF20STRLPbF
SiHFBF20STL-E3
IRFBF20STRL
SiHFBF20STL
= 25 °C
= 25 °C
2
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount (IRFBF20S, SiHFBF20S)
• Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
• Available in Tape and Reel (IRFBF20S, SiHFBF20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
the accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L, SiHFBF20L) is available for
low-profile applications.
2
Definition
PAK is suitable for high current applications because of
a
a
2
PAK is a surface mount power package capabel of
a
a
power
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
SiHFBF20STRR-GE3
IRFBF20STRRPbF
SiHFBF20STR-E3
IRFBF20STRR
SiHFBF20STR
D
stg
2
PAK (TO-263)
capability
design,
a
a
- 55 to + 150
and
a
LIMIT
a
300
± 20
0.43
900
180
1.7
1.1
6.8
1.7
5.4
3.1
1.5
54
10
low
a
Vishay Siliconix
d
the
I
SiHFBF20L-GE3
IRFBF20LPbF
SiHFBF20L-E3
IRFBF20L
SiHFBF20L
2
on-resistance
PAK (TO-262)
lowest
www.vishay.com
UNIT
W/°C
V/ns
possible
mJ
mJ
°C
W
N
V
A
A
and
1

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IRFBF20SPBF Summary of contents

Page 1

... Configuration PAK (TO-263) I PAK (TO-262 ORDERING INFORMATION 2 Package D Lead (Pb)-free and Halogen-free SiHFBF20S-GE3 IRFBF20SPbF Lead (Pb)-free SiHFBF20S-E3 IRFBF20S SnPb SiHFBF20S-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER e Drain-Source Voltage e Gate-Source Voltage Continuous Drain Current a,e Pulsed Drain Current Linear Derating Factor ...

Page 2

... IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... SYMBOL TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 1 ° 1.7 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated Vishay Siliconix MIN. TYP. MAX 350 530 b - 0.85 1.3 and L S Fig Typical Output Characteristics www.vishay.com ...

Page 4

... IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91121 S10-2433-Rev. A, 25-Oct-10 ...

Page 5

... Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91121 S10-2433-Rev. A, 25-Oct-10 IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Fig Maximum Drain Current vs. Case Temperature Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Document Number: 91121 ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91121. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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