IRF9520SPBF Vishay, IRF9520SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9520SPBF
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: Vishay

Specifications of IRF9520SPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.8 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.8A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9520SPBF

IRF9520S, SiHF9520S
Vishay Siliconix
www.vishay.com
4
91075_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91075_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
900
750
600
450
300
150
20
16
12
0
8
4
0
10
0
0
I
D
= - 6.8 A
- V
DS ,
4
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= - 20 V
8
V
C
C
C
GS
iss
rss
oss
V
DS
= 0 V, f = 1 MHz
= C
= C
= C
= - 50 V
10
gs
gd
ds
12
1
+ C
V
+ C
DS
C
C
C
gd
iss
oss
rss
gd
= - 80 V
, C
For test circuit
see figure 13
ds
16
Shorted
20
91075_07
91075_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
Fig. 8 - Maximum Safe Operating Area
10
-1
1
3
5
2
2
5
2
5
2
1
0
1.0
1
2
- V
- V
SD
DS
Operation in this area limited
T
T
Single Pulse
2.0
5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
J
= 175 °C
= 25 °C
175
10
25
°
by R
C
°
C
2
S10-1728-Rev. B, 02-Aug-10
3.0
DS(on)
Document Number: 91075
5
10
100
1
10
2
ms
4.0
ms
2
µs
V
GS
= 0 V
5
5.0
10
3