IRF9520SPBF Vishay, IRF9520SPBF Datasheet
IRF9520SPBF
Specifications of IRF9520SPBF
Related parts for IRF9520SPBF
IRF9520SPBF Summary of contents
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... The D D applications because of its low internal connection P-Channel MOSFET resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF9520S-GE3 SiHF9520STRL-GE3 IRF9520SPbF IRF9520STRLPbF SiHF9520S-E3 SiHF9520STL-E3 IRF9520S IRF9520STRL SiHF9520S SiHF9520STL = 25 °C, unless otherwise noted ° ...
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... IRF9520S, SiHF9520S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91075 S10-1728-Rev. B, 02-Aug- µs Pulse Width ° 91075_03 = 25 ° 4 µs Pulse Width T = 175 ° 91075_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9520S, SiHF9520S Vishay Siliconix ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF9520S, SiHF9520S Vishay Siliconix 900 MHz iss gs 750 rss oss ds 600 450 300 150 Drain-to-Source Voltage ( 91075_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 Total Gate Charge (nC) 91075_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91075_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91075 S10-1728-Rev. B, 02-Aug-10 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9520S, SiHF9520S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9520S, SiHF9520S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1000 Top 800 Bottom 600 400 200 100 ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91075. Document Number: 91075 S10-1728-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...