SI4484EY-T1-E3 Vishay, SI4484EY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4484EY-T1-E3
• Description: MOSFET N-CH 100V 4.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4484EY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.9A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 34mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 3.8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4484EY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71189
S09-1341-Rev. D, 13-Jul-09
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0
0
0
I
D
= 6.9 A
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
0.2
6
5
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
0.4
= 175 °C
-
I
D
Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
12
10
V
0.6
DS
V
GS
= 50 V
18
15
= 6.0 V
0.8
T
J
= 25 °C
V
GS
24
20
1.0
= 10 V
1.2
30
25
2500
2000
1500
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
2.4
2.0
1.6
1.2
0.8
0.4
0
- 50 - 25
0
0
I
D
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
= 6.9 A
10
2
V
V
0
T
C
DS
GS
J
rss
- Junction Temperature (°C)
-
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
20
Capacitance
4
50
30
Vishay Siliconix
75
V
GS
I
D
6
= 6.9 A
= 10 V
100
Si4484EY
40
www.vishay.com
125
8
50
150
C
C
oss
iss
175
60
10
3