SI4484EY-T1-E3 Vishay, SI4484EY-T1-E3 Datasheet

MOSFET N-CH 100V 4.8A 8-SOIC

SI4484EY-T1-E3

Manufacturer Part Number
SI4484EY-T1-E3
Description
MOSFET N-CH 100V 4.8A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4484EY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.034 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.8 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
6.9A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
34mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
3.8W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4484EY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4484EY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 088
Part Number:
SI4484EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4484EY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71189
S09-1341-Rev. D, 13-Jul-09
Ordering Information: Si4484EY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
100
(V)
G
S
S
S
1
2
3
4
0.040 at V
Si4484EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.034 at V
R
Top View
SO-8
DS(on)
J
a
= 175 °C)
GS
GS
a
(Ω)
= 6.0 V
= 10 V
N-Channel 100-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
6.9
6.4
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
I
DM
AR
thJA
thJF
I
DS
GS
AR
D
S
D
stg
®
Power MOSFETs
Typical
10 s
6.9
5.4
3.1
3.8
2.3
33
70
17
G
N-Channel MOSFET
- 55 to 175
± 20
100
30
25
31
D
Steady State
S
Maximum
4.8
3.7
1.5
1.8
1.1
40
85
21
Vishay Siliconix
Si4484EY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4484EY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4484EY-T1-E3 (Lead (Pb)-free) Si4484EY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) ...

Page 2

... Si4484EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Total Gate Charge (nC) g Gate Charge 175 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71189 S09-1341-Rev. D, 13-Jul- °C J 0.8 1.0 1.2 Si4484EY Vishay Siliconix 2500 2000 1500 1000 500 C rss Drain-to-Source Voltage ( Capacitance 1.6 1.2 0.8 0 ...

Page 4

... Si4484EY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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