IRF720SPBF Vishay, IRF720SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF720SPBF
• Description: MOSFET N-CH 400V 3.3A D2PAK
• Manufacturer: Vishay

Specifications of IRF720SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF720SPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91044
S-82998-Rev. A, 12-Jan-09
91044_01
91044_02
Fig. 2 - Typical Output Characteristics, T
10
10
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
-1
-2
-1
-2
1
0
1
0
10
10
Top
Bottom
-1
-1
Top
Bottom
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
C
4.5 V
C
4.5 V
= 150 °C
= 25 °C
91044_03
91044_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
150
I
V
D
GS
= 3.3 A
°
= 10 V
C
V
5
GS ,
T
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF720S, SiHF720S
°
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3